In-Situ Investigation of Particle Assisted GaSb Nucleation Using Environmental TEM
III-V semiconductor material based nanowires have been extensively studied and shown to be a very exciting building block for future electronics. Material systems such as GaSb show a lot of promise in optoelectric and thermoelectric generation applications because of its high electron mobility and small bandgap. Although there is a lot of research about III-V nanowires, a gap in understanding anti
