Investigating Flexoelectric Effect in Thin-Film Semiconductors Using FEM Simulation
Flexoelectric effect, or flexoelectricity, is an electromechanical property of materials that causes them to polarize when subjected to inhomogeneous deformation. Despite its significance in nanoscale systems, flexoelectricity remains poorly quantified in semiconductor materials. This study aims to develop a computational framework for investigating flexoelectric effects in thin-film semiconductor
